【CPSS TPEA 必读论文】15 kV SiC MOSFET 在中压固态变压器中的应用技术

原创中国电源学会中国电源学会

往期精选：CPSS TPEA | 2019年第4卷第2期目录

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15 kV SiC MOSFET: An Enabling Technology for Medium Voltage Solid State Transformers

15 kV SiC MOSFET 在中压固态变压器中的应用技术

DOI: 10.24295/CPSSTPEA.2017.00012

作者

Alex Q. Huang, Qianlai Zhu, Li Wang, Liqi Zhang

FREEDM Systems Center, North Carolina State University, Raleigh, US

Due to much higher achievable blocking voltage and faster switching speed, power devices based on wide bandgap (WBG) silicon carbide (SiC) material are ideal for medium voltage (MV) power electronics applications. For example, a 15 kV SiC MOSFET allows a simple and efficient two-level converter configuration for a 7.2 kV solid state transformer (SST) for smart grid applications. Compared with multilevel input series and output parallel (ISOP) solution, this approach offers higher efficiency and reliability, reduced system weight and cost by operating at medium to high switching frequency. However, the main concern is how to precisely implement this device in different MV applications, achieving highest switching frequency while maintaining good thermal performance. This paper reviews the characteristics of 15 kV SiC MOSFET and offers a comprehensive guideline of implementing this device in practical MV power conversion scenarios such as AC-DC, DC-DC and AC-AC in terms of topology selection, loss optimization and thermal management.

Output Charge of 15 kV SiC MOSFET Modules

The MV SiC MOSFET's Voltage × Frequency capability in comparison with Si high power devices such as IGBT/IGCT/ETO

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CPSS Transactions on

Power Electronics and Applications

《CPSS Transactions on Power Electronics and Applications》（缩写：CPSS TPEA）由中国电源学会主办，IEEE电力电子学会（IEEE PELS）技术协办，创刊于2016年，英文季刊，已面向国内外公开发行，收录论文均以开放获取的形式被IEEE Xplore、INSPEC收录。

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