An electronic structure calculation with full-potential and all-electron ab initio formalism is performed for hypothetical low-temperature simple cubic phases (Pn3 and Pa3 space groups) of C
Ohno Kaoru;Maruyama Yutaka;Takahashi Manabu;Yu Jing-Zhi;Gu Bing-Lin;Kawazoe Yoshiyuki
Surface Review and Letters
1996
A negatively charged donor center D- (i.e., a neutral shallow donor D0 that binds a second electron) in a spherical quantum dot is studied by use of a variational approach. A trial function which includes electron-correlation effects and approaches the Chandrasekhar-type function in the limit of zero barrier height is used. The well-radius and barrier-height dependence of the binding energy of the D- center is obtained. The dimensional characteristics are clearly demonstrated not only for the binding energy and its maximum of the D- center but also for the ratio of D- to D0 binding energy and the electron-correlation effect. © 1992 The American Physical Society.
Zhu Jia-Lin;Zhao Jie-Hua;Duan Wen-Hui;Gu Bing-Lin
Physical Review B
1992
The electronic structure of small icosahedral (I
Gu Bing-Lin;Li Zhi-Qiang;Zhu Jia-Lin
Journal of Physics Condensed Matter
1993
An eight-potential-well order-disorder ferroelectric model was presented and the phase transition was studied under the mean-field approximation. It was shown that the two-body interactions are able to account for the first-order and the second-order phase transitions. With increasing the random fields in the system, a first-order phase transition is transformed into a second-order phase transition, and furthermore, a second-order phase transition is inhibited. However, proper random fields can promote the spontaneous appearance of a first-order phase transition by increasing the overcooled temperature. The connections of the model with relaxors were discussed. © 2000 American Institute of Physics.
Liu Zhi-Rong;Gu Bing-Lin;Zhang Xiao-Wen
Applied Physics Letters
2000
The semiconducting alloy (GaSb)1-xGe2x is a member of a class of alloys that undergo order-disorder phase transitions between zinc-blende and diamond crystal structures. This transition modifies both the long-range and short-range order of the alloy as a function of composition x. This affects both thermodynamic quantities such as the order parameter, entropy, and phase diagram as well as the electronic structure, e.g., the band gap. These quantities are calculated with use of the Kikuchi approximation, combined with a correlated virtual-crystal approximation. Additionally, calculated bond probabilities are compared with extended x-ray-absorption fine structure (EXAFS) data. Both x-ray diffraction data and EXAFS data are found to be consistent with the existence in (GaSb)1-xGe2x of some wrong bonds of GaGa and SbSb. Finally, a novel violation of Vegards law for this alloy is predicted. © 1987 The American Physical Society.
Gu Bing-Lin;Newman Kathie E.;Fedders P. A.
Physical Review B
1987
The dynamics of the freezing process in relaxor ferroelectrics are investigated by Monte Carlo computer simulation. The concepts of frozen dipole and slow dipole are proposed according to the flipping frequency during the observation time of simulation. The deviation from Curie-Weiss behavior and the frequency dispersion in relaxor ferroelectrics have been proved to be caused by the increasing proportion of slow dipoles. The simulation shows that the external field reduces the dielectric constant and increases the temperature of dielectric maximum, which agrees with the experiment results. The polarization behavior with various electrical and thermal histories and starting from different initial states is also simulated and a systematic explanation based on the bifurcation tree of components in phase space is given. It is proposed that the relaxor characteristics are caused by a gradual freezing process of polar microregions, which arises from the inhomogeneous crystal structure of this kind of material. © 1995 The American Physical Society.
Gui Hong;Gu Binglin;Zhang Xiaowen
Physical Review B
1995
A method to prepare silicon nitride nanoscale rods using carbon nanotube as a template has been presented in this letter. The products of the reaction of carbon nanotubes with a mixture of Si and SiO
Han Weiqiang;Fan Shoushan;Li Qunqing;Gu Binglin;Zhang Xiaobin;Yu Dapeng
Applied Physics Letters
1997
The low-energy theory for finite long carbon nanotube is derived and numerically examined. It shows that the electronic structure is dominated by the quantum confining, which determines the profile of wave functions as well as the eigen energies; while the details of the wave functions are resolved by the structure of the nanotubes. This behavior is attributed to the peculiar electronic structure of the nanotubes. Because of the slow variation of the profile of electron wave functions, the measured conductance is NOT independent of the position to measure it, which is evident in the multiprobe experiment. © 2000 American Institute of Physics.
Wu Jian;Duan Wenhui;Gu Bing-Lin;Yu Jing-Zhi;Kawazoe Yoshiyuki
Applied Physics Letters
2000
On the basis of the Su-Schrieffer-Heeger model and the analysis of the physical pictures of the so-called endohedral complexes Na@xaC60 and Na@xaC70, which consist of C60 and C70 molecules and a sodium ion or atom trapped inside, we have introduced two reasonable terms in the Hamiltonian to describe the interaction between the metal ion and the fullerene cage. From this simple Hamiltonian, we can reproduce the results of other first-principles calculations. Using the simplex optimization method, we have calculated the lattice distortions when all carbon atoms relax, and their effect on the potential-energy curve. Our results show that this effect is large and important. We discuss the physical meaning of our results. © 1994 The American Physical Society.
Liu Jingnan;Iwata Shuichi;Gu Binglin
Physical Review B
1994
Considering the influence of interface roughness on phonon vibrational modes in the dielectric continuum model, electron-interface phonon scattering rates are calculated in a model GaAs/Ga
Duan Wenhui;Zhu Jia-Lin;Gu Bing-Lin
Journal of Physics Condensed Matter
1993