Optical response of free‐carrier plasma effects of MeV arsenic‐ion‐implanted silicon

• 摘要：

  Arsenic ions are implanted into silicon at an incident energy of 3 or 5 MeV to a dose of 1 × 10¹⁶ cm⁻². Buried conductive layers are formed in the Si substrate after annealing at 1050 °C for 20s. Infrared (IR) reflection spectra in the wave number range of 500 to 4000 cm⁻¹ are measured and interference fringes related to the optical response of free‐carrier plasma effects are observed. By detailed theoretical analysis and computer simulation of the IR reflection spectra, the depth profile of the carrier concentration, the carrier mobility near maximum carrier concentration, and the carrier activation efficiency are obtained. The physical interpretation of the results is given.

• 作者：

  Yuehui Yu;Zhuyin Zhou;Guoqin Zhao;世昌 邹

• 刊名：

  Physica Status Solidi (A) Applied Research

• 在线出版时间：

  1994-7-16