Experimental studies of superhard materials carbon nitride CN_x, prepared by ion-beam synthesis method

• 摘要：

  Formation of superhard materials carbon nitride CN_x by using ion-beam synthesis method is reported. 100-keV high-dose N⁺ ions were implanted into carbon thin films at different temperatures. The samples were evaluated by X-ray photoelectron spectroscopy (XPS), Fourier transformation-infrared absorption spectroscopy (FTIR), Raman spectroscopy, cross-sectional transmission electron microscopy (XTEM), Rutherford backscattering spectroscopy (RBS), X-ray diffraction analysis (XRD) and Vickers microhardness measurement. The results show that the buried carbon nitride CN_x layer has been successfully formed by using 100-keV high-dose N⁺ ions implantation into carbon thin film. Implantation of reactive ions into silicon (IRIS) computer program has been used to simulate the formation of the buried β-C₃N₄ layer as N⁺ ions are implanted into carbon. A good agreement between experimental measurements and IRIS simulation is found.

• 作者：

  Huoping Xin;Chenglu Lin;Huaping Xu;世昌 邹;小红 史;兴龙 吴;Hong Zhu;P. L.F. Hemment

• 刊名：

  Science in China, Series E: Technological Sciences

• 在线出版时间：

  1996