A preliminary study of the formation of WSi2 by high-current W ion implantation

• 摘要：

  Two differently structured WSi2 phases were formed by direct W ion implantation, for the first time, into silicon wafers using a metal vapour vacuum arc ion source. Implantation of W ions was conducted with an extract voltage of 40 kV, various beam densities from 50 to 115 mu A cm^-2 and a fixed dose of 5*10¹⁷ cm^-2. It was found that the formation of WSi2 with either a hexagonal or a tetragonal structure depended on the ion current density. The temperature rise caused by beam heating and the beam-striking time related to the dose were calculated, and they were responsible for the formation and evolution related to the differently structured WSi2 phases.

• 作者：

  Zhu D. H.;Lu H. B.;Tao K.;Liu B. X.

• 刊名：

  Journal of Physics Condensed Matter

• 在线出版时间：

  1993