C54-TiSi2 formed by direct high current Ti-ion implantation

• 摘要：

  We report, in this letter, the formation of TiSi2 by direct Ti-ion implantation into silicon wafers using a metal vapor vacuum arc ion source. Implantation was conducted by 80 KeV Ti ions to a dose of 5×10¹⁷/cm² with various ion current densities. When the ion current density exceeded 100 μA/cm², the equilibrium TiSi2 of the C54 structure was uniquely formed. Additional evidence of the formation of C54-TiSi2 was given by the resistivity measurements, i.e., the sheet resistivity was below 3.0 Ω/. The formation mechanism is also discussed in terms of the beam heating effect during implantation.

• 作者：

  Zhu D. H.;Tao K.;Pan F.;Liu B. X.

• 刊名：

  Applied Physics Letters

• 在线出版时间：

  1993