We report a new method for one-dimensional, self-organized, nanometer-sized crystalline silicon (nc-Si) dots growth through pulsed laser-induced melting followed by regrowth of a-Si:H films. A transient thermal grid was generated by a high energy KrF excimer laser through a phase shifting mask grating directly on the samples, leading to local phase transitions. The hemispherically shaped nc-Si dots with sizes of ∼200 nm in diameter and ∼20 nm in height were grown and self-organized along the lines of the grating. The microstructures and crystallinity of the nc-Si dots were determined using atomic force microscope images and cross-section transmission electron microscope photographs; and the growth mechanism of self-organized nc-Si dots is also discussed. © 1998 Elsevier Science B.V. All rights reserved.
Chen Kunji;Luo Guipeng;Wang Mingxiang;Gao Xiang;Xu Jun;Wang Mu;Huang Xinfan;Ming Naiben
Journal of Non Crystalline Solids