科研论文

返回至主页
  • One-dimensional, self-organized Si dots grown by pulsed laser melting of a-Si:H films

    • 摘要:

      We report a new method for one-dimensional, self-organized, nanometer-sized crystalline silicon (nc-Si) dots growth through pulsed laser-induced melting followed by regrowth of a-Si:H films. A transient thermal grid was generated by a high energy KrF excimer laser through a phase shifting mask grating directly on the samples, leading to local phase transitions. The hemispherically shaped nc-Si dots with sizes of ∼200 nm in diameter and ∼20 nm in height were grown and self-organized along the lines of the grating. The microstructures and crystallinity of the nc-Si dots were determined using atomic force microscope images and cross-section transmission electron microscope photographs; and the growth mechanism of self-organized nc-Si dots is also discussed. © 1998 Elsevier Science B.V. All rights reserved.

    • 作者:

      Chen Kunji;Luo Guipeng;Wang Mingxiang;Gao Xiang;Xu Jun;Wang Mu;Huang Xinfan;Ming Naiben

    • 刊名:

      Journal of Non Crystalline Solids

    • 在线出版时间:

      1998