Gate-variable optical transitions in graphene

Feng Wang;Yuanbo Zhang;传山 田;Caglar Girit;Alex Zettl;Michael Crommie;元壤 沈

University of California at Berkeley;Lawrence Berkeley National Laboratory

发表时间:2008-4-11

期 刊:Science

语 言:English

U R L: http://www.scopus.com/inward/record.url?scp=42049094251&partnerID=8YFLogxK

摘要

Two-dimensional graphene monolayers and bilayers exhibit fascinating electrical transport behaviors. Using infrared spectroscopy, we find that they also have strong interband transitions and that their optical transitions can be substantially modified through electrical gating, much like electrical transport in field-effect transistors. This gate dependence of interband transitions adds a valuable dimension for optically probing graphene band structure. For a graphene monolayer, it yields directly the linear band dispersion of Dirac fermions, whereas in a bilayer, it reveals a dominating van Hove singularity arising from interlayer coupling. The strong and layer-dependent optical transitions of graphene and the tunability by simple electrical gating hold promise for new applications in infrared optics and optoelectronics.

文献指纹

物理与天文学

optical transition

graphene

trucks

interlayers

infrared spectroscopy

fermions

field effect transistors

optics

被引量

期刊度量

Scopus度量

年份 CiteScore SJR SNIP
1996
1997
1998
1999 16.615 6.948
2000 13.319 7.003
2001 10.987 6.898
2002 10.814 7.242
2003 11.428 7.439
2004 11.589 7.237
2005 11.09 6.525
2006 10.542 6.097
2007 10.072 5.991
2008 11.277 6.041
2009 11.897 7.025
2010 13.481 7.745
2011 44.7 14.238 8.191
2012 46.3 13.318 7.992
2013 46.9 12.41 7.719
2014 46 12.052 8.045
2015 46.6 12.872 7.549
2016 49.5 13.745 7.652
2017 49.4 14.142 7.366
2018 47.1 13.251 7.529
2019 45.3 13.11 7.521
2020 45.5
2021

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