Formation of a CoSi2 layer by Co ion implantation using a metal vapor vacuum arc ion source

• 摘要：

  CoSi2 was formed by metal vapor vacuum arc ion implantation in both crystalline silicon and crystalline silicon deposited with a thin Co film. When the Si(111) wafers were implanted by Co ions at an extracted voltage of 40 kV with a current density of 100 and 152 μA/cm² to a fixed nominal dose of 2 × 10¹⁷/cm², a continuous CoSi2 layer was formed and the resistivities were in the range of 14-20 μΩ cm. When the Si wafers deposited with a Co film were implanted by Co ions at an extracted voltage of 20 kV with a current density of 100 μA/cm² to a dose ranging from 2 × 10¹⁷ /cm² to 6 × 10¹⁷ /cm², several Co-silicides were observed. Increasing the implanted dose or post-implantation annealing facilitated Co consumption and the transition from Co-rich silicide to CoSi2. © 1995.

• 作者：

  Zhu D. H.;Chen Y. G.;Liu B. X.

• 刊名：

  Nuclear Inst and Methods in Physics Research B

• 在线出版时间：

  1995