Annealing-induced blue shift in luminescence band from Si-implanted SiO2 layer

• 摘要：

  The SiO2 layers thermally grown on Si wafers were implanted by 130 keV Si ions at liquid nitrogen temperature to a dose of 1×10¹⁷ ions/cm². From the as-implanted samples, a visible photoluminescence band centered around 2.0 eV was observed. After postannealing at 1100°C for 90 min another visible band in the range of 1.7 eV was detected. Interestingly, with increasing thermal annealing time, a blue shift in peak energy and an intensity variation of the 1.7 eV band were observed. A possible interpretation for the observations was discussed in terms of a so-called three-region model. © 1997 American Institute of Physics.

• 作者：

  Lan A. D.;Liu B. X.;Bai X. D.

• 刊名：

  Journal of Applied Physics

• 在线出版时间：

  1997