Cengiz S. Ozkan;William D. Nix;华健 高
Stanford University;China Association for Science and Technology
发表时间:1997-4-28
期 刊:Applied Physics Letters
语 言:English
U R L: http://www.scopus.com/inward/record.url?scp=0001188638&partnerID=8YFLogxK
Mechanisms of strain relaxation and defect formation during surface roughening in Si1-xGex films grown epitaxially on (100)Si substrates have been investigated by controlled annealing experiments. Epitaxial films 10 nm in thickness and containing 18% Ge, which are subcritical with respect to the formation of misfit dislocations, show strain relaxation through surface roughening on annealing at 850 °C, where surface grooves are aligned along 〈100〉 directions. Other films with 22% Ge and supercritical thicknesses have also been studied, where surface grooves are aligned along 〈110〉 directions.
物理与天文学
Scopus度量
年份 | CiteScore | SJR | SNIP |
---|---|---|---|
1996 | |||
1997 | |||
1998 | |||
1999 | 4.173 | 2.054 | |
2000 | 4.137 | 2.023 | |
2001 | 4.281 | 2.198 | |
2002 | 4.012 | 2.407 | |
2003 | 3.897 | 2.275 | |
2004 | 3.992 | 2.341 | |
2005 | 3.755 | 2.341 | |
2006 | 3.459 | 2.295 | |
2007 | 3.012 | 1.917 | |
2008 | 2.894 | 1.83 | |
2009 | 2.826 | 1.865 | |
2010 | 2.92 | 1.788 | |
2011 | 7 | 2.814 | 1.928 |
2012 | 6.7 | 2.57 | 1.764 |
2013 | 6.5 | 2.146 | 1.634 |
2014 | 6.1 | 1.861 | 1.511 |
2015 | 6.4 | 1.499 | 1.293 |
2016 | 6.8 | 1.673 | 1.264 |
2017 | 6.9 | 1.382 | 1.244 |
2018 | 6.7 | 1.331 | 1.227 |
2019 | 7 | 1.343 | 1.252 |
2020 | 6.6 |
相似文献推荐