Cubic polycrystalline bulk materials of La-Pb-Mn-O were prepared by solid state reaction method. Magnetic measurements indicated that the samples are ferromagnetic, and T_C is 257K. Magnetotransport measurements showed that the metal-semiconductor transition temperature (T_p) of the samples is 251K, and near T_p the giant magnetoresistance (GMR) peak values reach 72% and 85% under 5T and 13T magnetic field, respectively. It was noticed that the samples present GMR effect over a wide temperature range from 77K to room temperature. The GMR effect is related to the behavior of the spin polaron, which is affected by both temperature and applied field. Besides the influence of the spin polaron, the GMR peak effect near T_p is also ascribed to the strong decline of spin-disorder scattering of carriers caused by the applied field. Furthermore, the GMR effect over the whole measured temperature, especially at low temperatures far below T_p, is also resulted from the spin-dependent scattering of carriers near grain boundary associated with the polycrystallinity of the samples. In addition, the inhibition of the spin-polarized intergrain tunneling at T_p leads to the disappearance of the low-field GMR effect caused by the Hund exchange.

Xiang Rong Zhu;Hong Lie Shen;Qin Wo Shen;世昌 邹;Tsukamoto Koichi;Yanagisawa Takeshi;Ito Toshimitsu;Higuchi Noboru;Okada Yasumasa;Okutomi Mamoru

Wuji Cailiao Xuebao/Journal of Inorganic Materials

1999

In this paper we report the fabrication of ferroelectric Pb(Zr,Ti)O₃ (PZT) thin films on Pt-coated SIMOX (Separated-by-IMplanted-OXygen) substrates by pulsed excimer laser deposition combined with rapid thermal annealing. Based on the structural and interfacial characteristics analysis by X-ray diffraction, Rutherford backscattering spectroscopy and transmission electron microscopy, the thin films were revealed to be of polycrystall ine perovskite structure with mainly <100> and <110> orientations; the crystallite size and the structure are dependent on the annealing time and temperature. The ferroelectric behaviour of the films was measured.

Chenglu Lin;Lirong Zheng;W. Ping Xu;世昌 邹

Ferroelectrics

1997

Si/Ge_0.5Si_0.5 strained‐layer superlattices are grown by molecular beam epitaxy on SIMOX substrates. Rutherford backscattering and channelling, cross‐sectional transmission electron microscopy are used to characterise the superlattice films. Experimental results show that the Si/Ge_0.5Si_0.5 strained‐layer superlattices can be successfully grown on SIMOX substrates, but with the minimum channelling yield (X_min) along 〈110〉 directions being higher than that along 〈100〉 directions, due to the lattice strain induced by the lattice mismatch between the Si/Ge_0.5Si_0.5 films and SIMOX substrate. The microstructure of the superlattices on SIMOX samples is analysed, and the presence of dislocations in the Si/Ge_0.5Si_0.5 superlattice films is correlated with the dislocation density in the SIMOX substrates.

Chenglu Lin;P. L.F. Hemment;C. W.M. Chan;Jinhua Li;Wenhua Zhu;Rushan Ni;Guoliang Zhou;世昌 邹

Physica Status Solidi (A) Applied Research

1992-8-16

By means of Fourier transform infrared spectroscopy, an ion‐beam‐induced structural transformation in aromatic polyimide (PI) films is observed. A quantitative evaluation approach is proposed, based on careful experimental considerations in both organic film preparations and ion implantations, to find out the detailed process of degradation for this macromolecular solid. The subtle difference between the structural modification during the low‐dose range and that during high‐dose range is believed to be distinguished. The analysis also shows that some aromatic rings may survive implantation and play an important role in the formation of PI films under high‐dose irradiation.

D. Xu;X. L. Xu;G. D. Du;Z. X. Lin;R. Wang;世昌 邹

Physica Status Solidi (A) Applied Research

1993-4-16

As SOI-CMOS technology nodes reach the tens of nanometer regime, body-contacts become more and more ineffective to suppress the floating body effect. In this paper, self-bias effect as the cause for this failure is analyzed and discussed in depth with respect to different structures and conditions. Other alternative approaches to suppressing the floating body effect are also introduced and discussed.

Jianhua Zhou;Minghui Gao;S. K. Pang;世昌 邹

Journal of Semiconductors

2011-2

The damage introduction rates of BF₂⁺, B⁺ and F⁺ ions implanted into (100) bulk silicon have been investigated over the energy range 3 to 13 keV amu^-1 at temperatures of 77 K and 300 K. The samples have been analysed using 2 MeV He⁺ Rutherford backscattering and channelling, and it is found that the damage created by BF₂⁺ molecular ions is significantly greater than that created by an equivalent dose of the atomic species B⁺ and F ⁺. This damage enhancement by the BF₂⁺ ions can be separated into bulk effects, which are due to displacement spikes, and surface effects, caused by multiple collision sequences involving the constituent particles (B and F) after dissociation of the incident BF ₂⁺ ion. Similar surface damage enhancements of 1.8 and 1.9 are found at 77 K and 300 K respectively, for particle energies of 3 keV amu^-1. The energy dependence of the surface enhancement factor shows a strong dependence upon ion energy reaching a maximum of 3.5 at 8 keV amu ^-l but approaches unity at higher energies.

Chenglu Lin;Jinhua Li;P. L.F. Hemment;Xiaogin Li;Gengin Yang;Zhuyao Zhou;世昌 邹

Semiconductor Science and Technology

1992

Hot carrier degradation under conventional maximum substrate current I_b,max, electronic gate current I_g (HE) and substrate enhanced electron injection (SEEI) in advanced deep sub-micron NMOSFETs is studied. It is found that the interface trap generation is the dominant mechanism for hot carrier degradation under these three stress conditions. Furthermore, the behavior of SEEI under AC stress applied to the gate is investigated by charge pumping. The results indicate that the interface trap generation is also the dominant mechanism for hot carrier degradation under AC stress. However, due to the recovery of SEEI, the degradation of the electrical parameters for NMOSFETs at equally effective stress duration under AC stress is slightly less than that under DC stress. Finally, the recovery behavior of secondary impact ionization damage is discussed by using an on-the-fly technique and the charge pumping spot measurement technique. It is found that the passivation of the interface traps is directly responsible for the recovery of I_dlin.

Q. X. Wang;L. X. Sun;A. Yap;Y. J. Zhang;H. Li;S. H. Liu;世昌 邹

Microelectronic Engineering

2008-3

Two new structures with Very-shallow-trench-isolation (VSTI) for vertical bipolar transistors on thin top-Si PD SOI are proposed and their characterization is studied by 2-D simulations. These bipolar structures are compatible with 0.13μm SOI-CMOS process. The two proposed transistors exhibit good device performance with current gain of 64.34 and 89.7, f_T of 24.04GHz and 22.8GHz, f_max of 23.78GHz and 40.31GHz, respectively.

Jianhua Zhou;S. K. Pang;世昌 邹

Chinese Journal of Electronics

2011-10

Based on 0.13 μm partially depleted silicon on insulator complementary metal-oxide-semiconductor transistor (SOI CMOS) technology, a complete set of 0.13 μm radiation hardened SOI CMOS standard cell library was developed. In view of the radiation effect of deep submicron SOI devices, the radiation hardened design is conducted on the circuit and layout level and has achieved good anti-radiation result. In-depth introduction of the library building flow of the SOI standard cell is given, and Hspice circuit simulation is conducted to verify the effectiveness of radiation hardened DFF and performance overhead between different circuits is compared. The test chip is designed to validate 0.13 μm radiation hardened SOI CMOS standard cell library.

Lingjuan Lü;Ruping Liu;Min Lin;Genqing Yang;世昌 邹

Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

2014-6

In this paper, a radiation-tolerant phase-locked loop (PLL) is designed and fabricated with 130 nm PD-SOI technology. A current-based charge pump is hardened using a current compensation technique in combination with the differential charge cancellation (DCC) layout of the complementary switches. Besides, the stacked SOI transistors are employed to mitigate single-event effects of the voltage-controlled oscillator. The experimental results show that the proposed PLL has no significant jitter variations under heavy-ion experiments, compared with TMR-hardened PLL. Besides, pulsed-laser testing comprehensively characterizes the single-event transients of the PLL and demonstrates its radiation tolerant performance.

Zhuojun Chen;Min Lin;Yunlong Zheng;Zuodong Wei;Shuigen Huang;世昌 邹

IEEE Transactions on Nuclear Science

2016-8