A novel silicon-on-insulator (SOI) polarization splitter-rotator (PSR) with a large fabrication tolerance is proposed based on cascaded multimode interference (MMI) couplers and an assisted mode-evolution taper. The tapers are designed to adiabatically convert the input TM₀ mode into the TE1 mode, which will output as the TE0 mode after processed by the subsequent MMI mode converter, 90-degree phase shifter (PS) and MMI 3 dB coupler. The numerical simulation results show that the proposed device has a < 0.5 dB insertion loss with < -17 dB crosstalk in C optical communication band. Fabrication tolerance analysis is also performed with respect to the deviations of MMI coupler width, PS width, slab height and upper-cladding refractive index, showing that this device could work well even when affected by considerable fabrication errors. With such a robust performance with a large bandwidth, this device offers potential applications for CMOS-compatible polarization diversity, especially in the booming 100 Gb/s coherent optical communications based on silicon photonics technology.

Jing Wang;Minghao Qi;Yi Xuan;Haiyang Huang;You Li;Ming Li;Xin Chen;Qi Jia;Zhen Sheng;爱民 武;Wei Li;曦 王;世昌 邹;甫烷 甘

Optics Express

2014-11-17

A new method, in which electron beam evaporation of titanium and bombardment with a 40 keV xenon ion beam were done simultaneously in a N₂ gas environment, has been developed to prepare titanium nitride films. The composition and structure of the films were investigated by means of RBS, AES and XRD. The xenon contamination in the films is very low and the films are mainly composed of TiN polycrystalline. A transition layer exists between the film and the substrate, which is of great benefit to the adhesion of the film to the substrate. The hardness of the film reached 2300 kg mm^-2, higher than that of films prepared by N⁺ ion beam enhanced deposition. Scratch tests showed the adhesion of the titanium nitride film to substrate is quite strong. The titanium nitride films have been applied to the surface protection of the scoring dies and the life time of the dies can be increased by about 5-10 times.

Xi Wang;Genqing Yang;Zhihong Zheng;Wei Huang;Zuyao Zhou;Xianghuai Liu;世昌 邹

Vacuum

1991

In this paper a new, modified s-d model for studying the quantum well states in a metal spacer of a magnetic metal sandwich structure is presented. The model is based on the following consideration that (1) in the direction perpendicular to the surface the conduction electron is limited in an infinite deep potential well; (2) the localized magnetic moment model is adapted for describing the atoms in the ferromagnetic layers; (3) the spin-flip scattering process is neglected because of the Heisenburg interaction. The resulted electron states are that the energy level is split into two symmetrical ones for a ferromagnetic configuration, which is in agreement with the recent experiments on the exchange-split spin-polarized electronic states. It is found that this simple model can explain the oscillatory exchange coupling with long period well.

Zhongcheng Wang;世昌 邹;Shaofeng Wang

Proceedings of SPIE - The International Society for Optical Engineering

1994-10-26

We designed and experimentally demonstrated the electromagnetic energy transfer along a single layer of dielectric nanoparitlces at optical communication frequency. The ultracompact characteristic make it possible to be used in the integrated photonic circuits.

Hao Li;爱民 武;Chao Qiu;Junjie Du;Jing Wang;Zhiqi Wang;Zhen Sheng;曦 王;世昌 邹;甫烷 甘

Asia Communications and Photonics Conference, ACP

2012

A very novel silicon-on-insulator polarization beam splitter is proposed based on cascaded mode-sorting asymmetric Y-junctions. The width and length of each Y-junction are optimized to achieve correct mode sorting with high conversion efficiency. The numerical simulation results show that the mode conversion efficiency increases with the length of the Y-junction for the waveguide widths varying in a large range. This proposed device has < 0.7 dB insertion loss with > 22 dB polarization extinction ratio in an ultrabroad wavelength range from 1450 to 1750 nm. Fabrication tolerance analysis is also performed with respect to the deviation in device width and height. With such a broad operating bandwidth and robust fabrication tolerance, this device offers potential applications for complementary metal oxide semiconductor (CMOS)-compatible polarization diversity operating across the S, C, L, and U optical communication bands, particularly in the booming 100-Gb/s coherent optical communications based on silicon photonics technology.

Jing Wang;Minghao Qi;Yi Xuan;Haiyang Huang;You Li;Ming Li;Xin Chen;Qi Jia;Zhen Sheng;爱民 武;Wei Li;曦 王;世昌 邹;甫烷 甘

IEEE Photonics Journal

2014-12-1

Axial channeling dip has been calculated by use of a continuum model and multistring thermally averaged potential. For the calculation of E//623 minus A(E PERPEND ) curve, instead of the dividing-cell method reported by K. Sa et al. , a random sampling procedure is used to improve the adaptability of the computer program. For the 1 Mev He on Si ( LT AN BR 110 RT AN BR channel, a psi //504 value of 0. 81 degree is obtained by use of a half-way plane model with multistring thermally averaged potential. This result is much closer to the experimental value (0. 75 degree ) as compared with the psi one-half and chi //m//i//n value between theoretical calculations and experiments and possible ways for improving the theoretical calculation are discussed.

Binyao Jiang;Zuhua Zhang;Zuyao Zou;Genqin Yang;世昌 邹

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

1987-3

In this paper we report the fabrication of ferroelectric Pb(Zr_0.52Ti_0.48)03 (PZT) thin films on Si-on-Insulator (SOI) substrates with and without an electrode by pulsed excimer laser deposition combined with rapid thermal annealing. Based on the structural and interfacial characteristics analysis by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM) and automatic spreading resistance measurement (ASR), the film structure and orientation were revealed to be dependent on the annealing time and annealing temperature as well as deposition temperature. From RBS spectra and XTEM observation it is shown that the PZT thin films did not interact with the top silicon layers of SOI and that the composition of the film was similar to the target. The ASR measurements showed that the electrical properties of PZT/SOI as well as PZT/Pt/SOI were abrupt, and that the electrical properties of the SOI substrates were still good after the PZT growth.

Lirong Zheng;Chenglu Lin;世昌 邹

Journal of Materials Science

1996

High quality SOI (silicon on Insulator) materials with single crystalline silicon top layer can be obtained by O⁺ or N⁺ implantation with high dosage, large beam current into silicon followed by a high temperature annealing. Infrared light with wavenumber ranging from 5000 cm^-1 to 1500 cm^-1 is not absorbed by silicon, SiO₂ and Si₃N₄. In this wavenumber range, the reflective IR-spectra of samples prepared in different ways were simulated and the refractive index profiles were obtained. The results are consistent with those obtained from transmission electron microscope and Rutherford backscattering and channeling analysis.

Ziwei Fang;Yuehui Yu;Chenglu Lin;世昌 邹

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

1990-4

Ga modified (Pb, La) TiO₃ films were deposited on Pt coated silicon substrates by using an ArF excimer laser. The films are polycrystalline and exhibit good ferroelectric and pyroelectric properties at room temperature. Because of the Ca modification, the figures of merit of the films for both specific detectivity and voltage responsivity are almost comparable with those of c-axis oriented PbTiO₃ or (Pb, La) TiO₃ films on the MgO single crystal substrate. Since these good results were obtained from the films on silicon, it is therefore of significance for monolithic integrated infrared image sensors.

Lirong Zheng;Pingxiong Yang;Chenglu Lin;世昌 邹

Zhongguo Jiguang/Chinese Journal of Lasers

1998

Shallow Trench Isolation (STI) and Stepped Oxide (SO) -based N-type LDMOS are simultaneously studied for the first time for low-voltage power device in this paper. Ultra-low specific on-resistance (R_sp) can be obtained in both STI- and SO-based LDMOS by scaling channel length (L_CH) as well as by using the optimized drift implant. It was indicated that, to some extent, scaling L_CH effectively reduces the R_sp without sacrificing breakdown voltage (BV). This is mainly ascribed to the enhanced conducting capability of channel and to the shorter cell pitch. Moreover, drift region was also studied and selected to obtain ultra-low R_sp at no cost of BV. Furthermore, scaling of gate oxide and field oxide are also demonstrated to obtain the best BV-R_sp tradeoff. Finally, it was observed that, for low-voltage LDMOS, STI-based cell exhibits slightly better BV-R_sp tradeoff, compared with SO-based LDMOS due to the shorter cell pitch. However, much better ON-state I_DS-V_DS characteristics can be achieved in SO-based LDMOS at small expense of R_sp. It was revealed that R_sp of 4.3 mΩ mm² with a BV of 29.3 V are measured in our planar SO-LDMOS. This R_sp is much lower than earlier published values.

Zhaozhao Xu;Donghua Liu;Jun Hu;Feng Jin;Xinjie Yang;Wenting Duan;Wei Yue;Ziquan Fang;Wensheng Qian;Weiran Kong;世昌 邹

Microelectronics Journal

2019-6