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  • Resonance Coupling in Silicon Nanosphere-J-Aggregate Heterostructures

    • 摘要:

      Due to their optical magnetic and electric resonances associated with the high refractive index, dielectric silicon nanoparticles have been explored as novel nanocavities that are excellent candidates for enhancing various light-matter interactions at the nanoscale. Here, from both of theoretical and experimental aspects, we explored resonance coupling between excitons and magnetic/electric resonances in heterostructures composed of the silicon nanoparticle coated with a molecular J-aggregate shell. The resonance coupling was originated from coherent energy transfer between the exciton and magnetic/electric modes, which was manifested by quenching dips on the scattering spectrum due to formation of hybrid modes. The influences of various parameters, including the molecular oscillation strength, molecular absorption line width, molecular shell thickness, refractive index of the surrounding environment, and separation between the core and shell, on the resonance coupling behaviors were scrutinized. In particular, the resonance coupling can approach the strong coupling regime by choosing appropriate molecular parameters, where an anticrossing behavior with a mode splitting of 100 meV was observed on the energy diagram. Most interestingly, the hybrid modes in such dielectric heterostructure can exhibit unidirectional light scattering behaviors, which cannot be achieved by those in plexcitonic nanoparticle composed of a metal nanoparticle core and a molecular shell.

    • 作者:

      Hao Wang;Yanlin Ke;宁生 许;Runze Zhan;Zebo Zheng;Jinxiu Wen;Jiahao Yan;Pu Liu;军 陈;峻聪 佘;Yu Zhang;Fei Liu;Huanjun Chen;少芝 邓

    • 刊名:

      Nano Letters

    • 在线出版时间:

      2016-11-9

  • Study of field emission microscopic images originated from coherent scattering of multiwalled carbon nanotubes

    • 摘要:

      The field emission images originated from multiwalled carbon nanotubes (MWCNT) were studied using field emission microscopy. The emitting electrons from the MWCNT were projected onto an ITO screen, on which a positive bias was applied. A CCD camera was used to record the images on the ITO screen, which were composed of rings with fine fringe structure. An electron coherent scattering mechanism was used to analyze the images.

    • 作者:

      P. Wu;少芝 邓;军 陈;峻聪 佘;宁生 许

    • 刊名:

    • 在线出版时间:

      2004

  • Fine-structured field emission images originating from coherently scattering of electrons within a multi-walled carbon nanotube

    • 摘要:

      High resolution field emission image of a single multi-walled carbon nanotube was studied by field emission microscopy. The images contain patterns consisting of rather ordered bright fringes. We propose a model based on coherent electron scattering to explain the observed field emission image. The emitted electrons will undergo coherent scattering within the cap region of a multi-wall carbon nanotube, which may be viewed as elastic scattering by a polycrystalline structure with an infinite size. This study is helpful for understanding the physical mechanism of field emission of carbon nanotube.

    • 作者:

      Ping Wu;少芝 邓;Jun Chen;宁生 许

    • 刊名:

      Applied Surface Science

    • 在线出版时间:

      2007-12-30

  • Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors With a Tandem Structure for High-Mobility and Reliable Operations

    • 摘要:

      The threshold voltage shift (Δ Vth) in amorphous InZnSnO thin-film transistors (a-IZTO TFTs) during negative gate-bias stress (NGBS) is significantly improved by nitrogen doping. Numerous N-In bonds eliminate donorlike subgap states near the Fermi level, which improve stability during stress but degrade electron mobility. We developed tandem TFTs with an a-IZTO:N layer on top of an a-IZTO layer, in which mobility reaches 31.76 ± 0.81 cm2/Vs and the reliability is improved. Especially, Δ Vth in NGBS is reduced by 80% for pristine a-IZTO devices. This simple but an effective method achieves fast and reliable operation in the a-IZTO TFTs.

    • 作者:

      Gong Tan Li;Bo Ru Yang;Chuan Liu;Chia Yu Lee;Yuan Chun Wu;Po Yen Lu;少芝 邓;Han Ping D. Shieh;宁生 许

    • 刊名:

      IEEE Electron Device Letters

    • 在线出版时间:

      2016-5

  • Synthesis and field emission properties of large-area uniform carbon nanotube films

    • 摘要:

      Uniform carbon nanotube films have been grown on large area silicon substrate by thermal CVD method. Field emission characteristics and emission site uniformity analysis have been studied.

    • 作者:

      Yu Zhang;少芝 邓;军 陈;宁生 许

    • 刊名:

    • 在线出版时间:

      2005

  • Luminescent properties of a novel nanocrystalline Lu3Ga 5O12:Tb3+ phosphor for FED application

    • 摘要:

    • 作者:

      X. G. Xu;军 陈;少芝 邓;宁生 许;俊 林

    • 刊名:

    • 在线出版时间:

      2009

  • Experimental observation of ultra-high field emission current from single carbon nanotube emitter

    • 摘要:

    • 作者:

      峻聪 佘;宁生 许;少芝 邓;军 陈;H. Bishop;S. E. Huq;L. Wang;D. Y. Zhong;恩哥 王

    • 刊名:

    • 在线出版时间:

      2003

  • P2-19

    • 摘要:

      A luminance-based method was proposed for the emission uniformity characterization of the flat plane cold cathode. A research of relating to new parameters redefining, testing and evaluating was introduced. A comparison was also taken in this paper with the current method.

    • 作者:

      L. Qin;少芝 邓;宁生 许;军 陈

    • 刊名:

    • 在线出版时间:

      2010

  • Pulsed-laser treatment of solution-grown ZnO nanowires in nitrogen

    • 摘要:

      Pulsed-laser (neodymium doped yttrium aluminum garnet; 1.06 μm in wavelength) treatments were performed on zinc oxide (ZnO) nanowires (NWs) in nitrogen. It results in nitrogen doping of ZnO, mainly with chemical states of N2 at oxygen sites, which is demonstrated by x-ray photoelectron spectroscopy studies. The laser treated ZnO NWs show significant improvement in electrical conduction and field emission. Typically, with the critical treated conditions of peak power 400 W and pulse duration 2 ms, NWs with the highest conductivity of 1.43× 10-2 S/cm was obtained. It is one order of magnitude higher than that of the as-prepared NWs (1.20× 10 -3 S/cm). These NWs show better field electron emission properties. The turn-on field is 2.0 MV/m and a current density of 5.3 mA/ cm2 can be obtained at a field of 3.0 MV/m. The underlying mechanisms related to the enhancing effect of conduction and field emission were discussed. The pulsed-laser treatment may be developed toward a technique for application in the study of nanoelectronic devices using NWs.

    • 作者:

      J. B. Chen;C. J. Xu;峻聪 佘;少芝 邓;军 陈;宁生 许

    • 刊名:

      Journal of Applied Physics

    • 在线出版时间:

      2010

  • Fabrication of vertically aligned Si nanowires and their application in a gated field emission device

    • 摘要:

      A technique involving a combination of using self-assembled nanomask and anisotropic plasma etching is developed for fabricating vertically aligned single-crystalline Si nanowires (SiNWs). The SiNWs are shown to have excellent field emission performance with the turn-on field as low as 0.8 MV/m and the threshold field being 5.0 MV/m. In addition, an emission current density of 442 mA/cm2 can be obtained at an applied field of ∼14 MV/m. The technique is easily employed to fabricate arrays of SiNW-based field emission microtriodes. Mechanisms are proposed to explain the formation of the SiNWs and the observed field emission properties.

    • 作者:

      峻聪 佘;少芝 邓;宁生 许;R. H. Yao;军 陈

    • 刊名:

      Applied Physics Letters

    • 在线出版时间:

      2006

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