A simplified simulation approach aiming at reducing computational complexity has been proposed for gated field emitters. In this approach, a thin-film cold cathode consisting of quasi-one-dimensional nanoemitters is modeled as a flat metallic thin-film. The surface of the thin-film is divided into equal-size grids. Fowler-Nordheim parameters fitted with experimental current-voltage data are used to calculate emission current from these individual grids. The statistics of the total emission current and its distribution between the gates and the anode are analyzed by summing the currents from all of the grids. The validity of the proposed approach is evaluated by comparing the simulation results with experimental data from gated carbon nanotube (CNT) thin-film field emitters. CNTs at the edge of the CNT film stand out as superior emitters, and proper consideration of such emitters plays a critical role in determining the validity of the proposed approach.

Jie Luo;军 陈;少芝 邓;宁生 许

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

2011

The preparation and field emission properties of nanostructured CuO emitters were discussed. Two schemes for preparation of nanostructured CuO were proposed, i.e. a room-temperature solid-liquid reaction and a high temperature solid-gas reaction. Nanostructured CuO films were prepared on various substrate including copper foils, copper stage and copper wires. The morphology and structure of the prepared nanostructured CuO films were characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). The results show that nanostructured CuO could be a promising cold cathode material.

C. Y. Li;J. X. Huang;军 陈;少芝 邓;宁生 许

2004

A novel process was developed for ultra-high density vertical aligned single crystal Si nanowire arrays synthesis. The investigation results on the field electron emission properties of the SiNWs were also reported. The field electron emission measurements on the SiNWs were carried out in a ultra-high vacuum systems. High-resolution transmission electron microscopy (HRTEM) inspection revels that the Si nanowires are single crystal having the same crystal oriented as the substrates. Field emission studies revealed that the SiNW arrays have a low threshold field of 0.3 MV/m for electron emission and a high emission current density.

峻聪 佘;少芝 邓;Jim Chen;宁生 许;S. E. Huq

2004

Shuit Tong Lee;长纯 朱;宁生 许

Microelectronics Journal

2004-4

Amorphous indium-gallium-zinc-oxide thin film transistor (a-IGZO TFT) was used as active driving device for ZnO nanowire field emitters. The characteristics of ZnO FEAs controlled by a-IGZO TFT were studied. Low driving voltage, precise control and stabilization of field emission current are achieved.

Xiaojie Li;Zhipeng Zhang;Hai Ou;峻聪 佘;少芝 邓;宁生 许;军 陈

2017-9-26

Aligned carbon nanotube (CNT) films exhibit excellent electron emission properties at very low fields. This has been attributed to the high aspect ratio of CNTs, i.e. their emitting surface can have high local field due to geometrical enhancement. It is found that a new mechanism can be responsible for the enhancement of the local field on the emitting surface of CNTs. This results from the space charge in the vacuum gap, which is readily generated due to the high emission current density of CNTs. Details are given of both experimental and theoretical studies of this effect. The mechanism also accounts for the distinct nonlinearity in Fowler-Nordheim plots often observed with CNTs. The implication of the technical application of our findings is also included.

宁生 许;Yue Chen;少芝 邓;军 陈;旭村 马;恩哥 王

Chinese Physics Letters

2001-9

In this study, the fabrication technologies for a gated CuO nanowire field emitter arrays were investigated. Fabrication process was optimized to achieve uniform emission. More uniform emission is achieved from the CuO nanowire field emitter arrays prepared with an additional lift-off process. The improved uniformity is attributed to the removal of etch residues as well as higher resistance between the CuO nanoemitter and cathode electrode. The study shows that the gated CuO nanowire field emitter arrays have potential for application in high resolution field emission display.

R. Z. Zhan;军 陈;少芝 邓;宁生 许

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

2010

D. M. Ban;宁生 许;少芝 邓;军 陈;峻聪 佘

2009

Flat panel photodetectors are widely studied and implemented in large-area imaging. However, developing highly sensitive flat panel photodetectors with high internal gain is still very challenging due to material limitation where photoelectron multiplication mechanisms have to be established. In this study, we proposed to use an electron bombardment induced photoconductivity (EBIPC) mechanism to achieve high internal gain in a flat panel photodetector based on a ZnS photoconductor integrated with ZnO nanowire (NW) field emitters. The photoconductivity of the ZnS thin film increased significantly upon bombardment with electrons from the emitters, which led to an internal photoconductive gain of above 10⁴ in a wide wavelength range. The photoresponse behaviors under different device parameters further verified that the high gain depended on the enhanced light-responsive performance of the ZnS thin film induced by the EBIPC mechanism. The proposed EBIPC mechanism is promising for use in flat panel photodetectors achieving high gain.

Zhipeng Zhang;Kai Wang;Keshuang Zheng;少芝 邓;宁生 许;军 陈

ACS Photonics

2018-10-17

Well-aligned ZnO nanocones were self-assembled on amorphous carbon using manganese oxide assisted thermal chemical vapor transport and condensation, without any metal catalysts. Compared with the ZnO nanowires fabricated without the manganese oxide assistance, the field emission performance of the ZnO nanocones was greatly improved, lower turn-on electronic fields and higher current densities were achieved with these emitters. Experimental analyses showed that the ZnO nanocones grow vertically and epitaxially on the [0002] oriented ZnO intermediate layer between nanocones and substrate The manganese oxide seems to play a crucial role in the formation of this ZnO intermediate layer.

玉华 杨;Y. Feng;宁生 许;国伟 杨

EPJ Applied Physics

2008-12